一、基本情况
王秀宇,男,博士,副教授,硕士生/博士生导师。主要从事电子功能材料与器件及可靠性的教学与科研工作。参与和承担国家、省部级及横向项目10多项,相关研究成果获天津市科技进步二等奖(排名第二)和天津市专利金奖(排名第一),授权发明专利10项,转化2项,近年来发表SCI三区以上论文10余篇。
二、工作经历
2007-2016, 天津大学电子信息工程学院
   2016-至今, 天津大学微电子学院
三、研究领域
电子功能材料与元器件(功能薄膜制备与防护、耐候缓蚀一体化防护、功能高分子复合材料与电子封装、电子封装材料与可靠性、PEDOT基Ta/Al固态电容、熔断电阻器用水性助熔断剂、半导体光电气敏特性器件与集成、UV光电探测器及UV图像传感器等)
四、讲授课程
  《固体物理》(本)、《微电子可靠性原理》(本)、《集成电路工艺原理》 (本)
《集成电路工艺技术》 (硕)
五、代表性科研成果
(I)论文:
[1] XiuyuWang, YanpengLiu, BonanDing et al, Influence of the addition of nano-TiO2 and ZnO on the sensing performance of micro-ZnSnO3 ethanol sensors under UV illumination, Sensors and Actuators B: Chemical, 276 (2018) 211–221.
[2] XiuyuWang, BonanDing, YanpengLiu et al, Synthesis of 3D flower-like ZnSnO3 and improvement of ethanol-sensing properties at room temperature based on nano-TiO2 decoration and UV radiation, Sensors and Actuators B: Chemical, 264( 2018) 119-127.
[3] Xiuyu Wang, Mingxiu Li, Bonan Ding et al, UV-enhanced ethanol-sensing properties of TiO2-decorated ZnSnO3 hollow microcubes at low temperature. Journal of Materials Science: Materials in Electronics, 28(2017) 12399–12407.
[4] X.Y. Wang, Y.P. Liu, B.N. Ding et al, Mechanism on M (M=Ni, Mo, Ni-Mo) as deep level   impurity reducing the TCR of Si-rich CreSi resistive films. Superlattices and Microstructures, 109(2017) 217–229.
[5]Xiuyu Wang, Tongning Chen, Mingxiu Li et al. Preparation and characteristics of polyimide/CaMoO4 nanocomposites with enhanced dielectric performance and thermal stability. Journal of Materials Science: Materials in Electronics, 28(2017) 5215–5221.
[6] X.Y. Wang, Q. Cheng, X.P. Ma et al,Improvement of reliability for high-ohmic Cr–Si thin film resistors in a heat and humid environment: Removing moisture source by electrocatalytic decomposition of water. Microelectronics Reliability, 60(2016)101–108.
[7] X.Y. Wang, H. Zhang, X.P. Ma et al,Degradation behavior and mechanism of polymer films for high-ohmic resistor protection in a heat and humid environment. Microelectronics Reliability, 57 (2016) 79–85.
[8]Xiaopin Ma, Xiuyu Wang, Mingxiu Li et al, A highly conductive poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) film with the solvent bath treatment by dimethyl sulfoxide as cathode for polymer tantalum capacitor. Chemical Physics Letters, 654(2016) 86–91.
[9] Xiaopin Ma, Xiuyu Wang, Mingxiu Li et al, Improved   Performances of Solid Tantalum Electrolytic Capacitors Using EG-treated PEDOT:PSS  Conducting Polymer as Cathode Electrodes, Chemistry Letters, 45(2016)717–719.
[10] Hao Zhang,Xiuyu Wang,Qiang Cheng et al,Preparation of Li2MoO4 using aqueous solution method and microwave dielectric properties after sintering,Journal of Materials Science:Materials in Electronics, 27(2016)5422–5426.
[11] X.Y. Wang, J.X. Ma, C.G. Li et al, Thermosetting polyimide resin matrix composites with interpenetrating polymer networks for precision foil resistor chips based on special mechanical performance. Applied Surface Science,299(2014)73–80.
[12] X.Y. Wang, J.X. Ma, C.G. Li et al, Structure and electrical properties of quaternary Cr-Si-Ni-W films prepared by ion beam sputter deposition. Journal of Alloys and Compounds,604(2014)12–19.
[13] X.Y. Wang, C.G. Li, J.X. Ma et al, Deposition of Cr-Si-Ni-Mo films at a low sputtering current and performance of heat and humid resistance. Applied Surface Science,289(2014) 539–544.
[14] X.Y. Wang, Z.S. Zhang, J.Q. Shao et al, Effects of metal Ni with catalytic activity on magnetron sputtered Cr-Si resistive film in a heat and humid environment. Surface and Coatings Technology, 205(2010) 2611–2617. 
[15] X.Y. Wang, Z.S. Zhang, T. Bai, Investigation on powder metallurgy Cr-Si-Ta-Al alloy target for high-resistance thin film resistors with low temperature coefficient of resistance. Materials and Design,  31(2010)1302–1307. 
[16] Wang Xiuyu, Zhang Zhisheng, Bai Tian et al, Thin film chip resistors with high resistance and low temperature coefficient of resistance. Transactions of Tianjin University, 16(2010) 348–353.
[17] Wang Xiuyu, Zhang Zhisheng, Bai Tian, Sun Guqing, Wang Jinlong, Huang Xiangdong, PF/EP/nano-SiO2 composite paint for resistor. Transactions of Tianjin University, 15(2009) 283–287.  
[18] Wang XiuYu,Yang GuiQin, Zhang ZhiSheng, Yan LeMei, Meng JianHua,  Synthesis of strong-magnetic nanosized black pigment ZnxFe(3-x)O4. Dyes and Pigments, 74(2007) 269–272. 
[19] Wang Xiuyu, Zhang Zhisheng, Li Haiyan, Hu Ming, Synthesis of modified epoxy resin undercoat for resistor by nano-SiO2. Transactions of Tianjin University, 12(2006) 193–198.
(II) 科研项目
(1)国家自然科学基金项目,基于电催化反应Ni-W、Ni-Mo 提高Cr-Si 高阻薄膜耐湿热性能研究”,项目负责人;
(2)安徽省科委, 精密金属膜电阻器用耐高温高湿涂料的研制及应用,项目负责人;
 (3)国家自然科学基金项目,基于力-光耦合控制机制的超柔性TiO2微盘腔生物传感器及其特性研究,第三参与人;
 (4)新型精密片式薄膜固定电阻器,第三参与人;
(5)天津科委,薄膜电阻器、薄膜集成电路用磁控溅射靶材产业化科技攻关,第三参与人;
此外,作为项目子课题负责人,完成总装军工项目一项;作为第二参与人,完成国防科工委军工项目2项;作为项目负责人,完成天津大学青年教师创新基金(军工应用技术类)2项。
 (III) 授权发明专利:
  (1) 耐高温、耐高湿涂料用于金属膜电阻器的封装工艺方法, ZL 200910068486.1,第一发明人(已转化,并获2011年天津市专利金奖);
  (2) 精密金属箔电阻芯片用耐高温粘箔复合胶及其制备方法,ZL 201210147157.8, 第一发明人(已转化);
  (3) 金属膜电阻器用耐高温、耐高湿涂料及其制备方法, ZL 200910068254.6,第一发明人;
  (4) 耐高温消融与透波涂料及其制备方法, ZL 200810151339.6,第一发明人;
  (5) 金属膜电阻器用耐湿热丙烯酸/酚醛树脂/nano-SiO2涂料及其制备方法, ZL200910228922.7,第一发明人;
  (6) 具有高热稳定性和低TCR的富硅Cr-Si基电阻膜及其制备方法,ZL201310537486.8,第一发明人;
  (7) 基于电催化性能提高Cr-Si高阻膜电阻器耐湿热性能的方法,ZL 201410699102.7,第一发明人;
  (8) 一种提高精密金属膜电阻耐湿热性能的涂料及其制备方法,ZL 201510485875.X,第一发明人;
  (9) 一种提高钼酸锂微波介质陶瓷品质因数的制备方法,ZL 201610044701.4,第一发明人;
  (10) 提高聚噻吩固体钽电容器性能一致性的真空控制装置,ZL 01510859851.6,第一发明人;
六、所获荣誉
(1) 年天津市科技进步二等奖,排名第2,证书编号:2010JB-2-021-R2. 获奖项目名称:高稳定金属膜电阻器用磁控溅射中高阻靶材及专用涂料
(2) 年天津市专利奖金奖,排名第1,证书编号:2011-ZJ-010-01. 获奖项目名称:耐高温、耐高湿涂料用于金属膜电阻器的封装工艺方法
七、学术服务
Materials Science and Engineering C, Corrosion science,Alloy and Compounds, Analytica Chimica Acta, Ceramics International,RSC Advances, Physica Status Solidi A: Applications and Materials Science, Optoelectronics and Advanced Materials–Rapid Communications, Materials Sciences and Applications,等期刊审稿人;教育部研究生学位论文评审专家。
八、其它
在进行项目研究的同时,还重注科技成果的生产力化,解决了一些项目合作公司遇到的技术问题,已进行产学研项目合作的公司有:中国振华集团云科电子有限公司、双环集团贝迪斯电子有限公司、北京718友晟电子有限公司、山东济宁正和电子有限责任公司、长春维鸿东光电子有限公司(原793厂)、天津世美特电子有限公司(熔断电阻器用助熔断剂)、天津金信达电阻有限公司和天津三环电阻公司等。
九、联系方式
办公地址:天津大学 微电子学院 26教学楼D区124/244
通信地址:天津市南开区卫津路92号,邮政编码:300072
联系电话:13920863680
电子信箱:wxy@tju.edu.cn